Conducting and interfacial properties of epitaxial SVO films

Details Conducting and interfacial properties of epitaxial SVO films Conducting and interfacial properties of epitaxial SVO films

Jan 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998aipc..420..672r&link_type=abstract

Space technology and applications international forum - 1998. AIP Conference Proceedings, Volume 420, pp. 672-678 (1998).

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Electrical Properties Of Specific Thin Films, Diffusion, Interface Formation, Structure And Morphology, Thickness, Crystalline Orientation And Texture

Scientific paper

Epitaxial thin films (20-200 nm) of SrVO3 have been grown by pulsed laser deposition on Si, MgO, LaAlO3, and SrTiO3 substrates. These films range from insulating, to semiconducting, to metallic, depending on substrate and growth conditions, with resistivity found to be as low as 1 μΩ-cm for SrVO3 films deposited on a Si substrate with a YSZ buffer layer. This is comparable to 10 μΩ-cm for Pt. XPS depth profiling has been performed to study the interface reactions of the films and XRD studies have been done to determine the crystal structure of the films.

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