Mathematics – Logic
Scientific paper
Jul 1992
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1684...76b&link_type=abstract
In: Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992 (A93-53076 23-33), p. 76-83.
Mathematics
Logic
Field Effect Transistors, Focal Plane Devices, Gates (Circuits), Heterojunction Devices, Logic Circuits, Readout, Electron Mobility, Energy Gaps (Solid State), Infrared Detectors, Signal Processing
Scientific paper
This paper describes a CMOS-like readout technology using GaAs heterostructure field effect transistors. Bandgap engineering techniques are described which provide complementary p-channel and n-channel GaAs FETs attractive for performing advanced signal processing functions with minimal power consumption and with precision operation in harsh environments. At 77 K, n&p channel CHFETs exhibit amplification factors of 6.7 and 2.3 mA/V-squared, respectively, with nearly ideal subthreshold characteristics and no I-V kinks or hysteresis. CHFET ring oscillators at 77 K attain propagation delays under 200 pS/gate while maintaining standby power dissipation under 1 micro-W/gate and switching power of 0.1 micro-W/gate/MHz. A simple operational amplifier exhibited 100 dB open loop gain at 65 K with 80 pA input leakage and 500 micro-W total power consumption.
Baier Staphen
Fraasch-Vold A.
Grider D.
Grung B.
Nohava J.
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