Comparison of the optical characteristics of GaAs photocathodes grown using MBE and MOCVD

Details Comparison of the optical characteristics of GaAs photocathodes grown using MBE and MOCVD Comparison of the optical characteristics of GaAs photocathodes grown using MBE and MOCVD

Feb 2003

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003spie.4796...11b&link_type=abstract

Low-Light-Level and Real-Time Imaging Systems, Components, and Applications. Edited by Johnson, C. Bruce; Sinha, Divyendu; Lapl

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Modern image tube intensifier photocathodes rely on a GaAs active layer, which has traditionally been grown using metallorganic chemical vapor deposition (MOCVD) due to its high throughput and lower cost of operation. Molecular beam epitaxy (MBE) processes have not been thoroughly investigated in that context. The latter technique demonstrates greater structural interface control as well as an improved growth quality for a multitude of applications. Still, at this point it is uncertain, considering actual fabrication techniques for image intensifiers, that the higher growth quality will result in an improvement of devices. Studies are being carried out to compare fundamental optical parameters between GaAs photocathodes grown by both MOCVD and MBE following the same growth and fabrication guidelines. These experiments involve using photoluminescence and Raman spectroscopy to obtain electron and phonon energy information on the materials. An atomic force microscope (AFM) is employed to compare the surface roughness of both methods. In addition, the white light responses of the photocathodes are also evaluated during the creation of a negative electron affinity (NEA) surface to observe any differences between the two growth techniques.

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