Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates

Details Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates Comparison of intersubband GaAs/AlGaAs multiple quantum well infrared photodetectors on GaAs and GaAs-on-Si substrates

Jul 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3379..410s&link_type=abstract

Proc. SPIE Vol. 3379, p. 410-422, Infrared Detectors and Focal Plane Arrays V, Eustace L. Dereniak; Robert E. Sampson; Eds.

Computer Science

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Scientific paper

We have successfully fabricated intersubband GaAs/AlGaAs quantum well infrared photodetectors grown on GaAs-on-Si substrate and evaluated their structural, electrical, and optical characteristics. We have found that the performance is comparable to a similar detector structure grown on a semi- insulating GaAs substrate. The results are promising for applications in the important 8 - 12 micrometer atmospheric window.

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