Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and SI substrates

Details Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and SI substrates Comparison of GaAs/AlGaAs quantum-well IR detectors fabricated on GaAs and SI substrates

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1735..228b&link_type=abstract

Proc. SPIE Vol. 1735, p. 228-238, Infrared Detectors: State of the Art, Wagih H. Makky; Ed.

Computer Science

Performance

2

Scientific paper

Nominally identical multiple-quantum-well detectors have been fabricated on GaAs and Si substrates, and the performance of these detectors has been compared at a temperature of 77 K and a wavelength of 10.2 micrometers . The two different substrates yield practically identical absorption characteristics, but the detector on the GaAs substrate has an approximately 60% higher specific detectivity because of its higher photoconductive gain and lower dark-current density.

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