Computer Science – Performance
Scientific paper
Oct 2005
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5964...28n&link_type=abstract
Advances in Optical Thin Films II. Edited by Amra, Claude; Kaiser, Norbert; Macleod, H. Angus. Proceedings of the SPIE, Volume
Computer Science
Performance
Scientific paper
Narrow-gap low-doped n-Hg1-xCdxTe (x = 0.18-0.35) material with electron concentration at liquid nitrogen temperature (77 K) n77≈(1-10)×1014 cm-3 is preferably used by all manufacturers of infrared (IR) radiation detectors as absorbing layer (n-absorber) of high performance Mid-Wave (MWIR), Long-Wave (LWIR) and Very Long-Wave (VLWIR) photoconductors (PC) covering spectral range from 3 to 25 μm. Low-doped n-Hg1-xCdxTe (x = 0.21-0.65) material with n77≈(1-5)×1015 cm-3 is perspective for development and production of novel small- pitched photovoltaic (PV) Short-Wave (SWIR), MWIR, LWIR and multi- color infrared focal plane arrays (FPA) covering spectral range from 1.3 to 12 μm. Novel FPA is based on photodiodes (PD) with p-n junction opposite to usually used n+-p junction. PD with optimal p-n junction could have lower dark current value than same size n+-p junction. It is very desirable for adequate multiplexing of PD arrays by Silicon Read-out Integrated Circuits (ROIC). Low-doped n-Hg1-xCdxTe could be grown by different techniques: bulk crystallization; liquid phase epitaxy (LPE); molecular beam epitaxy (MBE) having seriously different referring (melting/crystallization/annealing) temperatures. Objective of the present work was to examine and compare some crystalline, chemical and physical parameters and impact of PC device performance on their variation.
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