Collective flip-chip technology for HgCdTe IRFPA

Details Collective flip-chip technology for HgCdTe IRFPA Collective flip-chip technology for HgCdTe IRFPA

Sep 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2894..115t&link_type=abstract

Proc. SPIE Vol. 2894, p. 115-122, Detectors, Focal Plane Arrays, and Applications, William G. Frederick; Junhong Su; Marc Wigdor

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After a description of the flip-chip techniques developed at LETI, we present its main advantages and its evolution. Using this basic method, a mass production procedure has been developed in order to decrease the cost of the technological step. With this new method, we are able to simultaneously hybridize several linear or 2D arrays directly onto readout circuits on empty set 100 mm silicon wafer. The electrical accessibility to the components provided by the method enables more detailed electrical tests to be carried out with an automatic prober before manual integration in cryogenic conditions which is done only for good electrical devices. We have also developed a high reliability method in order to hybridize very large IRFPA. With this improved technique, 256 X 256 arrays can undergo several thousand 300 K - 77 K cycles without degradation.

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