Charge transfer ionization of SI /plus/ by H /plus/ at thermal energies

Details Charge transfer ionization of SI /plus/ by H /plus/ at thermal energies Charge transfer ionization of SI /plus/ by H /plus/ at thermal energies

Feb 1982

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1982a%26a...106..197g&link_type=abstract

Astronomy and Astrophysics, vol. 106, no. 2, Feb. 1982, p. 197-200.

Astronomy and Astrophysics

Astrophysics

30

Charge Transfer, Cosmic Plasma, Hydrogen Ions, Ion Production Rates, Silicon, Thermal Energy, Atomic Collisions, Ion Recombination, Ionization Cross Sections, Mathematical Models, Plasma Temperature, Reaction Kinetics

Scientific paper

Reaction rates for ionization charge transfer of Si(plus) in collision with H(plus) and for recombination charge transfer of Si(plus 2) in collision with atomic H are calculated over a wide range of thermal energies (10-1,000,000 K). The results obtained using the molecular model confirm that in coronal plasmas at temperatures where charge transfer ionization contributes to the ionization equilibrium, rotational mixing of the sigma and pi symmetry is of little practical importance. Only for collision energies in excess of 30 eV does rotational mixing begin to have an appreciable influence on the reaction rate.

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