Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy

Details Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy Characterization of HgCdTe epilayers grown on GaAs(211)B by molecular beam epitaxy

Sep 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2894..224c&link_type=abstract

Proc. SPIE Vol. 2894, p. 224-229, Detectors, Focal Plane Arrays, and Applications, William G. Frederick; Junhong Su; Marc Wigdor

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The growth of HgCdTe(MCT) epilayers on GaAs(211)B substrate by molecular beam epitaxy (MBE) have been reported. The growth procedure of MCT is described. Various characterization techniques have been employed for evaluating the quality of MCT epilayers. A planar PV array are fabricated for assessment of MCT epilayer quality. The present results represent an important step toward the demonstration of MBE epilayers for fabrication of focal plane arrays.

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