Characterization of a ΣΔ-based CMOS monolithic detector

Details Characterization of a ΣΔ-based CMOS monolithic detector Characterization of a ΣΔ-based CMOS monolithic detector

Jul 2010

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2010spie.7742e...8h&link_type=abstract

High Energy, Optical, and Infrared Detectors for Astronomy IV. Edited by Holland, Andrew D.; Dorn, David A. Proceedings of th

Astronomy and Astrophysics

Astronomy

Scientific paper

This paper is a progress report of the design and characterization of a monolithic CMOS detector with an on-chip ΣΔ ADC. A brief description of the design and operation is given. Backside processing steps to allow for backside illumination are summarized. Current characterization results are given for pre- and post-thinned detectors. Characterization results include measurements of: gain photodiode capacitance, dark current, linearity, well depth, relative quantum efficiency, and read noise. Lastly, a detector re-design is described; and initial measurements of its photodiode capacitance and read noise are presented.

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