Channeling in direct dark matter detection II: channeling fraction in Si and Ge crystals

Details Channeling in direct dark matter detection II: channeling fraction in Si and Ge crystals Channeling in direct dark matter detection II: channeling fraction in Si and Ge crystals

2010-08-22

arxiv.org/abs/1008.3676v2

JCAP 1011:028,2010

Astronomy and Astrophysics

Astrophysics

Cosmology and Extragalactic Astrophysics

28 pages, 45 figures, Accepted for publication in JCAP on 27 October 2010, Minor revisions: added an appendix, updated referen

Scientific paper

10.1088/1475-7516/2010/11/028

The channeling of the ion recoiling after a collision with a WIMP changes the ionization signal in direct detection experiments, producing a larger signal than otherwise expected. We give estimates of the fraction of channeled recoiling ions in Si and Ge crystals using analytic models produced since the 1960's and 70's to describe channeling and blocking effects. We used data obtained to avoid channeling in the implantation of dopants in Si crystals to test our models.

Affiliated with

Also associated with

No associations

Rating

Channeling in direct dark matter detection II: channeling fraction in Si and Ge crystals does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with Channeling in direct dark matter detection II: channeling fraction in Si and Ge crystals, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Channeling in direct dark matter detection II: channeling fraction in Si and Ge crystals will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-165715