CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes

Details CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes

Sep 1995

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1995spie.2554..137b&link_type=abstract

Proc. SPIE Vol. 2554, p. 137-142, Growth and Characterization of Materials for Infrared Detectors II, Randolph E. Longshore; Jan

Computer Science

Performance

Scientific paper

An etch process was developed to determine the dislocation density on <111>B - Hg(subscript 1-x)Cd(subscript x)Te-epilayers grown by liquid phase epitaxy from a tellurium-rich solution. A correlation between the etch pit density and the Cd(subscript 1-y)Zn(subscript y)Te-substrate material properties is found. Additionally the yield of photovoltaic diode performance strongly depends on the value of these measured dislocation densities. This method acts as a pass/fail evaluation for the epilayers used in our infrared device fabrication.

Affiliated with

Also associated with

No associations

Rating

CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes does not yet have a rating. At this time, there are no reviews or comments for this scientific paper.

If you have personal experience with CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and CdZnTe substrate and HgCdTe epilayer effects on the performance of photovoltaic diodes will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFWR-SCP-O-991417