Buried-channel CCDs with high charge transfer efficiency and large charge capacity for low-temperature readout of long-wavelength infrared detectors

Details Buried-channel CCDs with high charge transfer efficiency and large charge capacity for low-temperature readout of long-wavelength infrared detectors Buried-channel CCDs with high charge transfer efficiency and large charge capacity for low-temperature readout of long-wavelength infrared detectors

Jul 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992spie.1684..212l&link_type=abstract

In: Infrared readout electronics; Proceedings of the Meeting, Orlando, FL, Apr. 21, 22, 1992 (A93-53076 23-33), p. 212-219.

Computer Science

Performance

Charge Coupled Devices, Focal Plane Devices, Heterojunction Devices, Infrared Detectors, Infrared Imagery, Capacitance, Charge Transfer Devices, Fabrication, Ion Implantation

Scientific paper

Double ion implantation has been used to fabricate buried-channel CCDs that exhibit good charge transfer efficiency at temperatures down to 50 K while retaining large charge storage capacity. Monolithic IR focal plane arrays integrating such CCDs and Ge(x)Si(1-x)/Si heterojunction detectors show good imaging performance in both the 3-5 micron and 8-10 micron IR spectral bands.

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