Broadband quantum well infrared photodetectors

Details Broadband quantum well infrared photodetectors Broadband quantum well infrared photodetectors

Apr 1999

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..138l&link_type=abstract

Proc. SPIE Vol. 3629, p. 138-146, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.

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Typical quantum well infrared photodetectors (QWIPs) exhibit rather narrow spectral bandwidth of 1 to 2 micrometer. For certain applications, such as spectroscopy, sensing of a broader range of infrared radiation is highly desirable. In this work, we report the design of five broadband (BB-) QWIPs sensitive over the 7 to 14 micrometer spectral range. Three n- type BB-QWIPs consisting of three, four, and five quantum wells of different thickness and/or composition in a unit cell, which are then repeated 20 times for the three and four quantum wells (QW) devices and 3 times for the five QWs device to create the BB-QWIP structures, are demonstrated. The three- well n-type In(subscript x)Ga(subscript 1-x)As/Al(subscript y)Ga(subscript 1-y)As BB-QWIP is designed to have a response peak at 10 micrometer, with a FWHM bandwidth that varies with the applied bias. A maximum bandwidth of (Delta) (lambda) /(lambda) (subscript p) equals 21% was obtained for this device at V(subscript b) equals -2 V. The four- well n-type In(subscript x)Ga(subscript 1-x)As/GaAs BB-QWIP not only exhibits a very large responsivity of 2.31 A/W at 10.3 micrometer and V(subscript b) equals +4.5 V, but also achieves a broader bandwidth of (Delta) (lambda) /(lambda) (subscript p) equals 29% than the three-well device. The five-well n-type In(subscript x)Ga(subscript 1- x)As/GaAs BB-QWIP has achieved a FWHM bandwidth of (Delta) (lambda) /(lambda) (subscript p) equals 28% at V(subscript b) equals 1.75 V. In addition, two p-type In(subscript x)Ga(subscript 1-x)As/GaAs BB-QWIPs with variable well thickness and composition, sensitive in the 7 - 14 micrometer spectral range, are also demonstrated. The variable composition p-type BB-QWIP has a very large FWHM bandwidth of (Delta) (lambda) /(lambda) (subscript p) equals 48% at V(subscript b) equals -1.5 V and T equals 40 K. The variable thickness p- type BB-QWIP was found to have an even broader FWHM bandwidth of (Delta) (lambda) /(lambda) (subscript p) equals 63% at V(subscript b) equals 1.1 V and T equals 40 K, with a corresponding peak responsivity of 25 mA/W at 10.2 micrometer. The results reveal that p-type BB- QWIPs have a broader and flatter spectral bandwidth but lower responsivity than that of n-type BB-QWIPs under similar operating conditions.

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