BIB photodetectors based on antimony doped silicon

Details BIB photodetectors based on antimony doped silicon BIB photodetectors based on antimony doped silicon

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992esasp.356..153s&link_type=abstract

In ESA, Proceedings of an ESA Symposium on Photon Detectors for Space Instrumentation p 153-158 (SEE N94-15025 03-19)

Computer Science

Performance

Antimony, Doped Crystals, Far Infrared Radiation, Focal Plane Devices, Impurities, Photometers, Silicon, Spectral Bands, Spectroscopy, Blocking, Research And Development, Spacecraft Instruments, Vapor Deposition, Wavelengths

Scientific paper

Preliminary results on a developed Blocked Impurity Band (BIB) photodetector based on antimony silicon and processed by chemical vapor deposition growth technique are presented. The device displays a significant spectral responsivity in the 30 micrometer wavelength region where photoconductors based on Ge:Be have bad performances because of lattice modes absorption. This development aims at implementing the focal plane of the spaceborne atmosphere probe SAFIRE (Spectroscopy of the Atmosphere using Far InfraRed Emission) instrument.

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