Computer Science – Performance
Scientific paper
Jul 1991
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1447..298m&link_type=abstract
Proc. SPIE Vol. 1447, p. 298-309, Charge-Coupled Devices and Solid State Optical Sensors II, Morley M. Blouke; Ed.
Computer Science
Performance
Scientific paper
The Tektronix CCD Manufacturing Group has applied their thinning, back surface enhancement, and anti-reflection coating processes to produce a 1024 X 1024 charge- coupled device imager with high quantum efficiency (QE) from 350 to 1100 nm. The TK1024AB device, designed for scientific imaging applications, features low noise, wide dynamic range, excellent charge transfer efficiency and low dark current. The quad-output architecture permits the simultaneous readout of each quarter of the device, reducing the time to read out the CCD to that of a 512 X 512 device. This paper summarizes the test results from several lots of TK1024AB runs. The subjects covered include QE, on-chip amplifier characteristics, dark current measurement, CTE and characterization of various defects. The paper also describes the test hardware and procedures used to evaluate the performance of the devices.
Blouke Morley M.
Hayes Raymond
Marsh Harry H.
Yang Fanling H.
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