Computer Science
Scientific paper
Apr 1999
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1999spie.3629..268c&link_type=abstract
Proc. SPIE Vol. 3629, p. 268-278, Photodetectors: Materials and Devices IV, Gail J. Brown; Manijeh Razeghi; Eds.
Computer Science
Scientific paper
GaSb/AlSb/InAs is an attractive system for making low noise avalanche photodetectors (APD) due to possible resonant enhancement of hole impact ionization in Al(subscript x)Ga(subscript 1-x)Sb and potential enhancement of electron impact ionization in GaSb/AlSb superlattices. We have employed molecular beam epitaxy (MBE) to fabricate device structures so that these effects could be further explored. The devices were grown on GaSb substrates and incorporated a p(superscript -)n(superscript +) one sided abrupt junction. The p(superscript -) multiplication region consisted of either bulk Al(subscript 0.04)Ga(subscript 0.96)Sb or 10 periods of alternating, 300 angstrom thick GaSb and AlSb layers. A short period, selectively doped InAs/AlSb superlattice was used as the n(superscript +) layer. Dark current suppression in these devices was found to be largely dependent on the InAs/AlSb superlattice configuration and the resulting band offset at the p(superscript -)n(superscript +) heterojunction. Notably, for devices with a 0.6 micrometer Al(subscript 0.04)Ga(subscript 0.96)Sb multiplication region and an optimized InAs/AlSb superlattice, an avalanche break down voltage of 13 V was observed. The dark current density for this device was 6 A/cm(superscript 2) at a multiplication factor of 10. Devices with GaSb/AlSb superlattice multiplication regions exhibited a higher breakdown voltage (18.5 V) and a lower dark current density (0.4 A/cm(superscript 2)) at comparable gain. Impact ionization rates in Al(subscript 0.04)Ga(subscript 0.96)Sb were studied by using 781 nm and 1645 nm laser light. The results were consistent with enhancement of hole impact ionization in Al(subscript 0.04)Ga(subscript 0.96)Sb.
Cheng Xiao-Chang
McGill Thomas C.
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