Attainment of high D* at room temperature via gate-modulated detector interface

Details Attainment of high D* at room temperature via gate-modulated detector interface Attainment of high D* at room temperature via gate-modulated detector interface

Jun 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996spie.2745...40k&link_type=abstract

Proc. SPIE Vol. 2745, p. 40-49, Infrared Readout Electronics III, Eric R. Fossum; Ed.

Computer Science

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Scientific paper

We report the performance of InGaAs and HgCdTe FPAs using multiplexing readouts having gate modulated interface to the infrared detectors. Gate modulation enables extremely high sensitivity via self-adjusting current gain and concomitant high transimpedance. At operating temperatures where the detector current was dominated by photocurrent, gate modulation current gain is > 40,000 and yield input- referred read noise of < 2 e-. Key highlights include D(superscript *) exceeding 10(superscript 13) Jones at room temperature and 10(superscript 16) Jones at 170 K with a 1.68 micrometers InGaAs FPA.

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