Computer Science
Scientific paper
Jun 1986
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986tutf.rept.....p&link_type=abstract
Interim Report Tampere Univ. of Technology (Finland).
Computer Science
Absorption Spectra, Gallium Arsenides, Mercury Cadmium Tellurides, Molecular Beam Epitaxy, Substrates, Concentration (Composition), Infrared Spectra, Mechanical Properties, Rates (Per Time), Single Crystals, Structural Analysis, Thin Films
Scientific paper
Molecular Beam Epitaxial growth of Hg1-ICdITe films of 8 x 8 sq mm in size has been carried out at high mercury concentration with I ranging from 0.2 to 0.4 for various samples. Most of the films are deposited onto semi-insulating 2 deg off (100) GaAs substrates on which a CdTe buffer layer of 0.5-2 to micrometer is first grown. The films are single crystals exhibiting a (100) orientation in most cases (occasionally a (111) orientation is observed, too). Film thickness is varied from 500 nm to 2 micrometer. A diffusion barrier cap of 20 nm is deposited on top of this layered structure. Infrared absorption spectra are measured for a few selected samples. An absorption spectrum and growth parameters of a sample are shown. The absorption edge appears at the wavelength of about 8.5 micrometer.
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