Annealing studies of undoped Hg1-xMnx Te bulk crystals at high temperatures

Details Annealing studies of undoped Hg1-xMnx Te bulk crystals at high temperatures Annealing studies of undoped Hg1-xMnx Te bulk crystals at high temperatures

Aug 1996

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1996jemat..25.1383k&link_type=abstract

Journal of Electronic Materials, Volume 25, Issue 8, pp.1383-1387

Computer Science

Annealing, Defects, Hgmnte, Long Wavelength Infrared (Lwir)/Very Long Wavelength Infrared (Vlwir) Detectors, Pressure-Temperature Diagram

Scientific paper

The effect of high temperature annealing treatments in varying mercury atmospheres on Hg1-xMnxTe crystals with long wavelength infrared/very long wavelength infrared cut off wavelengths has been studied. The undoped Hg1-xMnxTe crystals were grown using the traveling heater method with a tellurium solvent zone, and composition was verified by infrared transmission measurements. The crystals were subjected to annealing temperatures of 500 and 550°C under mercury pressures varying from Hg-rich conditions to Te-rich conditions. The samples were either air cooled or water cooled to room temperature. Hall effect measurements were carried out at 77K at magnetic fields varying from 500 Gauss to 10 kGauss. The hole concentration in the annealed crystals was found to be roughly inversely proportional to the partial pressure of Hg indicating that the material is essentially intrinsic at the anneal temperature. A defect model and a relationship between the mass action constants for the native acceptor defects of HgMnTe are presented.

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