Analysis of the Si II and Si III DR Processes Applied to Stellar Envelopes

Details Analysis of the Si II and Si III DR Processes Applied to Stellar Envelopes Analysis of the Si II and Si III DR Processes Applied to Stellar Envelopes

Jun 2001

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2001apj...554..571c&link_type=abstract

The Astrophysical Journal, Volume 554, Issue 1, pp. 571-577.

Astronomy and Astrophysics

Astronomy

Atomic Processes, Infrared: Stars

Scientific paper

In an earlier attempt to explain the observed excess in the IR flux of Be stars, we have analyzed the dielectronic recombination (DR) of Mg II in stellar envelopes and the influence of this atomic process on the stellar flux. In the present paper, we study the DR of other ions with astrophysical significance, namely, Si II and Si III, and reach the conclusion that Si II may also contribute to the IR excess in Be stars.

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