Analysis of the quantum efficiency of a GaInAsSb photovoltaic detector

Details Analysis of the quantum efficiency of a GaInAsSb photovoltaic detector Analysis of the quantum efficiency of a GaInAsSb photovoltaic detector

Aug 1998

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998spie.3553..160t&link_type=abstract

Proc. SPIE Vol. 3553, p. 160-163, Detectors, Focal Plane Arrays, and Imaging Devices II, Pingzhi Liang; Marc Wigdor; William G.

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Scientific paper

In this paper, the theoretical analysis of the quantum efficiency in an n(superscript +)-p GaInAsSb IR photovoltaic detector is presented. The investigations of material parameters and the direction of the incident light are carried out for the near room temperature and 2.5 micrometers wavelength. The analysis results show that the direction of the incident light effects on the quantum efficiency. In addition, the quantum efficiency strongly depends on the carrier concentration in the p region. Moreover, other material parameters also effect on the quantum efficiency.

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