Analysis of the far-ultraviolet silicon lines in G dwarf stars

Details Analysis of the far-ultraviolet silicon lines in G dwarf stars Analysis of the far-ultraviolet silicon lines in G dwarf stars

Feb 1980

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1980a%26a....82..221f&link_type=abstract

Astronomy and Astrophysics, vol. 82, no. 1-2, Feb. 1980, p. 221-224.

Astronomy and Astrophysics

Astronomy

1

Dwarf Stars, Far Ultraviolet Radiation, G Stars, Line Spectra, Silicon, Spectrum Analysis, Ultraviolet Spectra, Chromosphere, Emission Spectra, Iue, Spaceborne Astronomy, Stellar Temperature

Scientific paper

The structure of the outer stellar regions is investigated for four G type dwarfs observed with the IUE satellite. Line fluxes of the Si II lines at 1817 A, 1808 A, and 1309 A and Si III at 1206 A are used to obtain temperatures and electronic densities. A temperature of 16,000 K is found from the lines at 1817 A and 1808 A, 26,000 K from the 1309 A line and 50,000 K from that at 1206 A. Predicted fluxes are compared with the observed ones. The significance of the results is discussed in terms of line formation regions.

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