Analysis of Ternary InGaN Layers Grown By Atmospheric Pressure Vertical MOVPE

Details Analysis of Ternary InGaN Layers Grown By Atmospheric Pressure Vertical MOVPE Analysis of Ternary InGaN Layers Grown By Atmospheric Pressure Vertical MOVPE

Apr 2007

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2007aipc..899..295y&link_type=abstract

SIXTH INTERNATIONAL CONFERENCE OF THE BALKAN PHYSICAL UNION. AIP Conference Proceedings, Volume 899, pp. 295-296 (2007).

Other

Iii-V Semiconductors, Galvanomagnetic And Other Magnetotransport Effects, Iii-V Semiconductors, X-Ray Diffraction, Chemical Vapor Deposition, Nucleation And Growth: Microscopic Aspects

Scientific paper

We present a study on the n-type ternary InGaN layers grown by atmospheric pressure vertical metal organic chemical vapor deposition on GaN template/(0001) sapphire substrate. An investigation in the different growth conditions on n-type of the InxGa1-xN, alloys was made for three series samples. Structural, electrical and optical properties were characterized by High X-Ray Diffraction, Hall effect and Photoluminescence respectively.

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