Analysis of High-l Rydberg Levels of Silicon from the Solar Spectrum

Details Analysis of High-l Rydberg Levels of Silicon from the Solar Spectrum Analysis of High-l Rydberg Levels of Silicon from the Solar Spectrum

Jan 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994phdt........29s&link_type=abstract

PhD Dissertation, Massachusetts Univ. Amherst, MA United States

Computer Science

5

Silicon, Fine Structure, Infrared Spectra, Polarization Characteristics, Solar Spectra, Emission Spectra, Fitting, Quadrupoles, Ionization, Atoms, Energy Levels

Scientific paper

The quadrupole moment-polarization potential which models the interaction of a non-penetrating Rydberg electron with a non-spherical atomic core has been derived from first principles. In order to test the model, we have determined new and highly accurate term values for the 5g, 6g, 6h, 7h and 7i levels of silicon. Some of these new energy levels are based on a detailed analysis of the ATMOS infrared solar spectra, while the higher n=7 levels have been conclusively identified by re-analyzing the solar 12 micron silicon emission lines. By fitting ther model to the new energy levels, we have shown that only the extended polarization model, which includes the complete second order shift due to the model potential, is capable of reproducing the observed data to within the experimental uncertainties. The model has been implemented using a least squares fitting routine, from which we have determined accurate values for all the leading core parameters. The new Si I ionization limit of 65 747.727 +/- 0.01/cm, represents a substantial improvement over the previously accepted value. In addition, there is strong evidence that separate dipole polarizabilities should be used for each core fine structure level. Both theoretical calculations and fits to observed levels suggests that the 3/2 core polarizability is almost 1% larger than that of the 1/2 core.

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