An oxide passivated and ion-implanted SI detector for X-ray astronomy

Details An oxide passivated and ion-implanted SI detector for X-ray astronomy An oxide passivated and ion-implanted SI detector for X-ray astronomy

Nov 1986

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1986stin...8911663m&link_type=abstract

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Astronomy and Astrophysics

Astronomy

Detectors, Ion Implantation, Oxides, Passivity, Satellite-Borne Instruments, Silicon, X Ray Astronomy, Cryogenic Cooling, Cryostats, Earth Orbital Environments, Liquid Nitrogen

Scientific paper

The characteristics of an oxide passivated and ion-implanted Si detector are studied for applications in low energy X-ray astronomy in space. An energy resolution of 0.34 keV FWHM including amplifier noise was achieved at 5.9 keV using a cooled detector at -40 C with an effective area of 1 sq mm. This detector can be used without a heavy cooling system such as a liquid nitrogen cryostat on a satellite in near earth orbit.

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