Computer Science – Performance
Scientific paper
Feb 1983
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1983itns...30..508a&link_type=abstract
(U.S. Department of Energy, NBS, and NASA, Nuclear Science Symposium, 29th, and Symposium on Nuclear Power, 14th, Washington, DC
Computer Science
Performance
5
Dosimeters, Field Effect Transistors, Metal Oxide Semiconductors, Performance Tests, Satellite-Borne Instruments, Spacecraft Instruments, Aluminum, Cobalt 60, Electron Bombardment, Gamma Rays, P-Type Semiconductors, Radiation Dosage, Threshold Voltage
Scientific paper
A p-channel metal oxide semiconductor (PMOS) FET for dosimetry on board satellites is described as part of a four-transistor package forming a spacecraft MOS dosimeter (SMD). The PMOS FETs are radiation soft, which produces a dosimetric parameter defined as the shift in the threshold voltage. The dosage is absorbed by an SiO2 film. The relationship between the threshold voltage shift and the dosage is calibrated using a Co-60 gamma ray source. Implantation of the four MSD units in varying thicknesses of aluminum permits a depth-dose analysis. Performance of the circuit has remained steady under bombardment with 7 MeV electrons up to a 150 krad dosage.
August L. S.
Circle R. R.
Ritter J. C.
Tobin J. S.
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