An Experiment to Measure Dielectronic Recombination in a Known External Field.

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Scientific paper

An experiment to measure dielectronic recombination in singly and multiply-charged ions is described. The cross section for this process is believed to be sensitive to the external electric fields in the ion rest frame. The inclined-beams geometry reported here permits the application of known external fields whose strengths can be adjusted to cover a range from 1 V/cm, where the effects of the fields are expected to be small, to 25 V/cm, where the fields are expected to enhance the DR rate coefficient by factors of 2 to 6. A measurement of the absolute rate coefficient for dielectronic recombination in C^{3+ } for an external electric field of 12 +/- 1.6 V/cm is presented and compared to theory. The measured rate coefficient, 3.6 +/- 1.5 times 10^{ -10} cm^3/sec, is inconsistent (at the 90 percent confidence level) with calculations that do not include the effects of field enhancement. When fields are considered, theoretical predictions lie at the lower edge of the experimental error bars (at the 68 percent confidence level). This is the first experimental determination of a dielectronic recombination rate coefficient in a multiply -charged ion for which the external electric fields have been measured directly. Cross section measurements for electron impact excitation of C^{3+ } and charge transfer of C^ {3+} on H_2 are also presented.

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