An Avalanche Photo Diode for a UV Camera: The Concept and a Progress Report

Details An Avalanche Photo Diode for a UV Camera: The Concept and a Progress Report An Avalanche Photo Diode for a UV Camera: The Concept and a Progress Report

Jan 2011

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2011aas...21742506u&link_type=abstract

American Astronomical Society, AAS Meeting #217, #425.06; Bulletin of the American Astronomical Society, Vol. 43, 2011

Astronomy and Astrophysics

Astronomy

Scientific paper

The current low read noise devices on HST have QEs of about 10%, and Although CCDs can work down to about 200 nm, they suffer from having a read leak even with filters, plus the filters reduce the effective UV efficiency as well. The GaN APD on which we are working can in principle deliver over 50% QE to as short as 150 nm right now, and shorter with improvements. The out of band QE is less that a 0.1%, which means the filters can do their job without the concern of a red leak. We present a progress report on a single pixel APD with about 25% QE in which even at room temperature the dark induced pulses are almost completely suppressed. This work has been funded in part by NASA.

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