An assessment of the use of resonant-mode topologies for high frequency power conversion

Details An assessment of the use of resonant-mode topologies for high frequency power conversion An assessment of the use of resonant-mode topologies for high frequency power conversion

Aug 1989

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1989esasp.294..331w&link_type=abstract

In ESA, European Space Power, Volume 1 p 331-337 (SEE N90-17678 10-20)

Computer Science

Field Effect Transistors, High Frequencies, Metal Oxide Semiconductors, Power Converters, Pulse Duration Modulation, Topology, Energy Conversion Efficiency, Power Factor Controllers, Resonance Testing, Resonant Frequencies

Scientific paper

The switching of power MOSFET (metal oxide semiconductors field effect transistors) at high frequencies is examined in the light of the advantages and disadvantages experienced when using resonant-mode topologies. With careful choice of topologies appropriate to application areas, many disadvantages may be avoided. A comprehensive account of the available resonant mode topologies is presented. A categorization of these topologies according to their characteristic advantages and disadvantages is given. This is supplemented by a comprehensive list of references.

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