Aluminum nitride for 6H-SiC power devices

Details Aluminum nitride for 6H-SiC power devices Aluminum nitride for 6H-SiC power devices

Jan 1997

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1997aipc..387..825t&link_type=abstract

Space technology and applications international forum (STAIF - 97). AIP Conference Proceedings, Volume 387, pp. 825-830 (1997).

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Metal-Insulator-Semiconductor Structures, Surface States, Band Structure, Electron Density Of States, Charge Carriers: Generation, Recombination, Lifetime, Trapping, Mean Free Paths, Measurements In Electric Variables

Scientific paper

Aluminum nitride (AlN) is a potential gate insulator material for 6H-SiC metal-insulator-semiconductor (MIS) devices for high temperature and high power applications. A critical requirement for a viable gate insulator material is that the insulator/semiconductor interface must have a very low interface state density, low insulator fixed charge density, as well as a low density of interfacial trapping centers. Our capacitance-voltage (CV) measurements have shown that it is possible to obtain an AlN/6H-SiC interface with such characteristics. Although CV measurements done at 573 K have shown evidence of the activation of deeper interfacial charged centers, they still reveal the presence of a low number of interface states and low insulator charge density. The disadvantage of this material system is the high leakage current density. However, by using a stacked AlN structure, we have found that it is possible to obtain MIS structures that are able to sustain breakdown fields close to the theoretical values. The possible use of a very thin AlN layer to enhance the characteristics of a Au-6H-SiC Schottky diode will also be discussed.

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