Alumina microstrip GaAs F.E.T. 11 GHz oscillator

Details Alumina microstrip GaAs F.E.T. 11 GHz oscillator Alumina microstrip GaAs F.E.T. 11 GHz oscillator

Jul 1975

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1975ell....11..300s&link_type=abstract

Electronics Letters, vol. 11, July 10, 1975, p. 300, 301. Research supported by the Ministry of Defence and European Space Resea

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Applications

Aluminum Oxides, Amplifier Design, Field Effect Transistors, Gallium Arsenides, Microstrip Devices, Microwave Oscillators, Strip Transmission Lines, Integrated Circuits, Low Noise, Power Efficiency, Transistor Amplifiers, Volt-Ampere Characteristics, Weight Reduction

Scientific paper

A small, lightweight 11-GHz FET oscillator has been developed. An output
power of 10 mW with an efficiency of 10% was easily produced using a
GaAs FET designed for small-signal amplifier applications. Its low power
consumption makes it a suitable low-noise source for integrated-receiver
applications.

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