Aligned array FETs as a route toward THz nanotube transistors

Details Aligned array FETs as a route toward THz nanotube transistors Aligned array FETs as a route toward THz nanotube transistors

May 2005

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2005spie.5790..246y&link_type=abstract

Terahertz for Military and Security Applications III. Edited by Hwu, R. Jennifer; Woolard, Dwight L.; Rosker, Mark J. Procee

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The development of nanowire and nanotube FETs for high frequency applications faces a challenge of impedance matching, due to the inherent mismatch between the resistance quantum (≈ 25 kΩ) typical of nanodevices, and the characteristic impedance of free space (≈ 377 Ω) typical of RF circuits. One possible solution is to use parallel nanotube or nanowire FETs to decrease the input impedance, and increase the drive current. In this paper, we present our progress towards this goal using aligned arrays of nanotube FETs. Initial studies on randomly oriented CVD grown devices give mobilities of 4 cm2/V-s. These initial devices carry ≈ 0.25 mA of current. Even higher mobilities (hence very high operational frequencies up to THz) should be possible with aligned nanotube FETs.

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