Advances in multiple-quantum-well IR detectors

Computer Science – Performance

Scientific paper

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Scientific paper

The performance of GaAs/AlGaAs multiple quantum well long-wavelength infrared detectors is evaluated for potential applications in focal plane arrays. A number of GaAs/AlGaAs quantum well infrared detectors with absorption between 7 to 12 micrometers have been fabricated and characterized. In these samples, the quantum well width and barrier height were held approximately constant, while the AlGaAs barrier thickness was varied from 300 to 500 angstrom. These detectors were characterized by FTIR absorption, dark current, responsivity, spectral noise density, and thermal activation energy measurements at temperatures ranging from 6 to 80 K. A maximum detectivity of 4 X 10(superscript 13) cm(root)Hz/W at 6 K is obtained at (lambda) equals 8.4 micrometers for the 500 angstrom barrier sample.

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