Computer Science
Scientific paper
Dec 1991
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1991spie.1540..135l&link_type=abstract
In: Infrared technology XVII; Proceedings of the Meeting, San Diego, CA, July 22-26, 1991 (A93-38376 15-35), p. 135-139.
Computer Science
2
Doped Crystals, Heterojunction Devices, Infrared Absorption, Infrared Detectors, Silicon Compounds, Boron, Microstructure, Molecular Beam Epitaxy, Photoelectric Emission, Transmission Electron Microscopy
Scientific paper
SiGe/Si heterojunction internal photoemission (HIP) long wavelength infrared (LWIR) detectors have been fabricated by MBE. The SiGe/Si HIP detector offers a tailorable spectral response in the long wavelength infrared regime by varying the SiGe/Si heterojunction barrier. Degenerately doped p(+) SiGe layers were grown using elemental boron, as the dopant source allows a low growth temperature. Good crystalline quality was achieved for boron-doped SiGe due to the reduced growth temperature. The dark current density of the boron-doped HIP detectors was found to be thermionic emission limited. HIP detectors with a 0.066 eV were fabricated and characterized using activation energy analysis, corresponding to a 18 micron cutoff wavelength. Photoresponse of the detectors at wavelengths ranging from 2 to 12 microns has been characterized with corresponding quantum efficiencies of 5 - 0.1 percent.
George Teddy
Huberman M. L.
Jones Eric W.
Ksendzov Alex
Lin Ting-L.
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