Advanced infrared photonic devices based on HgMnTe

Details Advanced infrared photonic devices based on HgMnTe Advanced infrared photonic devices based on HgMnTe

Dec 1993

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1993spie.2021...22b&link_type=abstract

Proc. SPIE Vol. 2021, p. 22-34, Growth and Characterization of Materials for Infrared Detectors, Randolph E. Longshore; Jan W. B

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This review is oriented toward practical technological aspects of growth and applications of narrow bandgap semimagnetic semiconducting HgMnTe alloys. It summarizes recent achievements in crystal growth, device fabrication, and device characterization. Current work is focused on analyses of the growth process, approaches for the achievement of improved composition uniformity, the relationship between material properties and device performance, a comparison of performance of HgMnTe and HgCdTe devices, and new magnetic exchanged- based IR devices.

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