Advanced far infrared detector and double donor studies in GE

Details Advanced far infrared detector and double donor studies in GE Advanced far infrared detector and double donor studies in GE

Dec 1994

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1994stin...9533625o&link_type=abstract

M.S. Thesis California Univ., Berkeley. Lawrence Berkeley Lab, CA. Engineering Div.

Astronomy and Astrophysics

Astrophysics

Additives, Astrophysics, Far Infrared Radiation, Infrared Detectors, Ionization, Selenium, Annealing, Damage, Defects, Fast Neutrons

Scientific paper

This has application to astronomy and astrophysics. Selenium in Ge has been studied with a doping technique which limits complex formation. Only one ionization level has been found to correspond to selenium, which presumably occupies a substitutional site. This level is extremely unstable and its concentration decreases after annealing at 400 C. Future work is planned to anneal the fast neutron damage before much selenium has formed in the 74/76Ge samples. It is expected that the observed selenium level can be better characterized and the missing selenium level is more likely to be discovered if other defects are removed before 77Se formation.

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