Active pixel sensors for imaging X-ray spectrometers

Details Active pixel sensors for imaging X-ray spectrometers Active pixel sensors for imaging X-ray spectrometers

Mar 2003

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2003spie.4851..770h&link_type=abstract

X-Ray and Gamma-Ray Telescopes and Instruments for Astronomy. Edited by Joachim E. Truemper, Harvey D. Tananbaum. Proceedings

Astronomy and Astrophysics

Astronomy

1

Scientific paper

Active Pixel Sensors (APS) offer high-resolution imaging in combination with a fast and flexible readout. The MPI Halbleiterlabor develops and produces DEPFET (Depleted Field Effect Transistor) based APS devices. They are additionally characterized by enhanced sensitivity for X-ray photons in the range from 0.1 keV to 25 keV, spectroscopic energy resolution (below 1 electron r.m.s.) and radiation hardness. Moreover, the production process on high-ohmic silicon allows incorporating additional high-speed spectrometers based on silicon drift detectors. Such a detector system is proposed as a wide field imager for the XEUS (X-ray Evolving Universe Spectroscopy) mission. XEUS is a planned project within the European Space Agency's Horizon 2000+ program. We will present a focal plane concept for XEUS and measurement results from DEPFET-APS prototypes and high speed drift detectors.

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