Acceptor doping of Bridgman-grown Cd(x)Hg(1-x)Te

Details Acceptor doping of Bridgman-grown Cd(x)Hg(1-x)Te Acceptor doping of Bridgman-grown Cd(x)Hg(1-x)Te

Feb 1985

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1985jcrgr..71...57c&link_type=abstract

Journal of Crystal Growth (ISSN 0022-0248), vol. 71, Jan.-Feb. 1985, p. 57-65. Research supported by the Ministry of Defence (Pr

Computer Science

11

Acceptor Materials, Bridgman Method, Crystal Growth, Doped Crystals, Ion Implantation, Mercury Cadmium Tellurides, Hall Effect, Heat Treatment, Mercury Vapor

Scientific paper

Dopants from Groups I (Li, Cu, Ag) and V (P, As, Sb) were added in elemental form to Cd(x)Hg(1-x)Te crystals grown by the Bridgman process. Chemical analyses first used to determine segregation behavior along the grown crystals are then linked to Hall effect measurements to establish the electrical activity of each dopant. Linear relationships were found between carrier concentration and amount of dopant added for Ag and Sb, which are believed to be the lowest-diffusing species within their group. Hall effect values for doped materials are compared with those from samples containing native acceptor defects, and are found to be shallower.

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