Absolute oscillator strengths for 108 lines of SI I between 163 and 410 nanometers

Details Absolute oscillator strengths for 108 lines of SI I between 163 and 410 nanometers Absolute oscillator strengths for 108 lines of SI I between 163 and 410 nanometers

Nov 1987

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1987apj...322..573s&link_type=abstract

Astrophysical Journal, Part 1 (ISSN 0004-637X), vol. 322, Nov. 1, 1987, p. 573-583. SNSF-supported research.

Other

21

Line Spectra, Oscillator Strengths, Silicon, Transition Probabilities, Ultraviolet Spectra

Scientific paper

Measurements of neutral silicon oscillator strengths (f-values) obtained by absorption and emission techniques have been combined using the numerical procedure of Cardon et al. (1979) to produce 108 f-values for the Si I lines between 163 and 410 nm. Beam-foil-lifetime measurements were employed to determine the absolute scale. The present measurements have uncertainties of about 0.07 dex (+ or - 16 percent) at the 1-sigma level of confidence. Good agreement is obtained between the results and previous data. The data also provide upper limits for the f-values of 22 other lines and information on the lifetimes for 36 levels in Si I.

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