A Schottky-barrier image sensor with 100-percent fill factor

Details A Schottky-barrier image sensor with 100-percent fill factor A Schottky-barrier image sensor with 100-percent fill factor

Sep 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990spie.1308...70k&link_type=abstract

IN: Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990 (A91-36726 15-35). Bel

Other

Barrier Layers, Focal Plane Devices, Image Reconstruction, Infrared Imagery, Schottky Diodes, Barritt Diodes, Carrier Injection, Holes (Electron Deficiencies), P-Type Semiconductors

Scientific paper

A new concept, the Direct Schottky Injection (DSI), is described for a three-dimensional construction of infrared imagers with a continuous Schottky-barrier-detector surface on one side of a thinned (10 to 25 microns) silicon substrate and p-type buried-channel CCD readout structure on the other side. The DSI structure provides a 100-percent fill factor, a large charge-handling capacity, and a high-density pixel design. The construction and operation are described for DSI imagers with frame-transfer CCD (FT-CCD) and interline-transfer CCD(IT-CCD) readout. The operation of the IT-CCD DSI imager was demonstrated with a 128 x 128 focal plane array (FPA) with 50 x 50-micron pixels.

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