Statistics – Applications
Scientific paper
Jan 1998
adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1998aipc..420.1400g&link_type=abstract
Space technology and applications international forum - 1998. AIP Conference Proceedings, Volume 420, pp. 1400-1409 (1998).
Statistics
Applications
1
Iii-V Semiconductor-To-Semiconductor Contacts, P-N Junctions, And Heterojunctions, Photoconduction And Photovoltaic Effects, Iii-V Semiconductors
Scientific paper
Heterojunction n-Al0.25Ga0.75As0.02Sb0.98/p-In0.16Ga0.84As0.04Sb0.96 thermophotovoltaic (TPV) cells were grown by molecular-beam epitaxy on n-GaSb-substrates. In the spectral range from 1 μm to 2.1 μm these cells, as well as homojunction n-p-In0.16Ga0.84As0.04Sb0.96 cells, have demonstrated internal quantum efficiencies exceeding 80%, despite about a 200 meV barrier in the conduction band at the heterointerface. Estimation shows that the thermal emission of the electrons photogenerated in p-region over this barrier can provide high efficiency for hetero-cells if the electron recombination time in p-In0.16Ga0.84As0.04Sb0.96 is longer than 10 ns. Keeping the same internal efficiency as homojunction cells, hetero-cells provide a unique opportunity to decrease the dark forward current and thereby increase open circuit voltage (Voc) and fill factor at a given illumination level. It is shown that the decrease of the forward current in hetero-cells is due to the lower recombination rate in n-type wider-bandgap space-charge region and to the suppression of the hole component of the forward current. The improvement in Voc reaches 100% at illumination level equivalent to 1 mA/cm2 and it decreases to 5% at the highest illumination levels (2-3 A/cm2), where the electron current component dominates in both the homo- and heterojunction cells. Values of Voc as high as 310 meV have been obtained for a hetero-cell at illumination levels of 3 A/cm2. Under this condition, the expected fill factor value is about 72% for a hetero-cell with improved series resistance. The heterojunction concept provides excellent prospects for further reduction of the dark forward current in TPV cells.
Charache Greg W.
Connolly John C.
Depoy David M.
Garbuzov Dmitri Z.
Khalfin Victor
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