A new reliability mechanism observed on Al gate based PHEMT structure

Details A new reliability mechanism observed on Al gate based PHEMT structure A new reliability mechanism observed on Al gate based PHEMT structure

Dec 2002

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2002esasp.507...63m&link_type=abstract

Proceedings of the European Space Components Conference, ESCCON 2002, 24-27 September 2002, Toulouse, France. Compiled by R.A. H

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Scientific paper

This paper demonstrates successful reliability results for Space
Applications of the GaAs pH15 7268 Low Noise Amplifier MMIC from UMS.
The mean time to failure has been estimated greater than 4.9 10 7 hours
at Tch=110°C.

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