A long-term change of the AR/KR/XE fractionation in the solar corpuscular radiation

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Breccia, Chemical Fractionation, Concentration (Composition), Etching, Gas Composition, Lunar Rocks, Rare Gases, Solar Corpuscular Radiation, Solar Wind, Chemical Composition, Ilmenite, Irradiation, Lunar Geology, Radiation Effects

Scientific paper

Solar noble gases in an ilmenite separate from breccia 79035 (antiquity greater than 1 Ga) were analyzed by closed system stepped etching (CSSE). All five gases show the familiar two-component structure: first solar-wind (SW) gases are released, followed by gases from solar energetic particles (SEP). Element patterns in 79035 are similar to those of 71501 ilmenite. SW-He-Ne were partly lost, but SEP-He-Ne-Ar are retained (nearly) unfractionated. Constant Ar/Kr/Xe ratios indicate that ilmenites contain an unfractionated sample of the heavy SW-SEP noble gases. Ar/Kr/Xe ratios in the solar corpuscular radiation are, however, different from 'solar system' values, whereby the Kr/Xe difference in 79035 is about twice as large as in 71501. We propose that Xe is less fractionated than Kr and Ar, though its first ionization potential (FIP) is higher than the 'cutoff' at approximately 11.5 eV, above which all elements in SEP are usually assumed to be depleted by a roughly constant factor. SW-Ne may be isotopically slightly heavier in the ancient SW trapped by 79035, as proposed earlier. In this work we extend our previous CSSE studies of solar noble gases including Kr and Xe to a lunar sample irradiated at least 1 Ga ago (breccia 79035, ilmenite separate, 42-64 microns). This sample was particularly gently etched in the first steps. Surprisingly, the first three steps, each releasing less than or equal to 0.5% of the total 36-Ar, showed an SEP-like trapped component plus relatively large concentrations of cosmogenic gases. Steps 4ff contain much less cosmogenic and more solar gas with a SW-like isotope pattern. Thus, a very minor easily etchable phase that has completely lost its SW-gases must be responsible for steps 1-3. We will not discuss these steps here and refer to the actual step 4 as the 'initial' etching step.

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