A linear monolithic 4-6 on silicon IR detector array

Details A linear monolithic 4-6 on silicon IR detector array A linear monolithic 4-6 on silicon IR detector array

Dec 1992

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1992esasp.356..401v&link_type=abstract

In ESA, Proceedings of an ESA Symposium on Photon Detectors for Space Instrumentation p 401-404 (SEE N94-15025 03-19)

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Applications

Chalcogenides, Cmos, Infrared Detectors, Infrared Imagery, Linear Arrays, Multiplexing, Capacitors, Design Analysis, Lead Compounds, Silicon

Scientific paper

A linear array of monolithically grown PbTe and PbSnSe detectors on (111)-Si for MWIR and TIR imaging applications was designed and processed. The array consists of a staggered row of 2 by 128 detectors on a 100 micrometers pitch. The readout circuitry, integrated on the Si substrate consists of a COS multiplexer with a direct injection input stage, a charge reduction stage and charge to voltage conversion stage for each individual detector. This XDI (MultipeXed Direct Injection) circuit also allows for on-chip nonuniformity compensation with a switched capacitor network.

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