A large-area CMOS monolithic active pixel sensor for extreme ultraviolet spectroscopy and imaging

Details A large-area CMOS monolithic active pixel sensor for extreme ultraviolet spectroscopy and imaging A large-area CMOS monolithic active pixel sensor for extreme ultraviolet spectroscopy and imaging

Jun 2004

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2004spie.5301..175p&link_type=abstract

Sensors and Camera Systems for Scientific, Industrial, and Digital Photography Applications V. Edited by Blouke, Morley M.; Samp

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We describe our programme to develop science-grade CMOS active pixel sensors for future space science missions, and in particular an extreme ultra-violet spectrograph for solar physics studies on the ESA Solar Orbiter. Our goal is the development of a large format 4k x 4k pixel CMOS sensor with useful sensitivity in the extreme ultra-violet (EUV) for solar physics spectroscopy and imaging. Our route to EUV sensitivity relies primarily in adapting the back-thinning and rear-illumination techniques first developed for CCD sensors; however we are also exploring the alternative approach of using a front-etch to expose the CMOS photodiodes. We have successfully back-thinned several 525 x 525 prototype CMOS sensors and proved that the devices survived the process both structurally and functionally. We have also been successful in removing the oxide from the front side of a small array of pixels, using focused ion beam etching. Preliminary results from these pixels show they are sensitive in the Ultra Violet. We have also designed a working large format 4k x 3k prototype on a 0.25 micron CMOS imager process.

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