A comparative study of proton radiation damage in p- and n-channel CCDs

Details A comparative study of proton radiation damage in p- and n-channel CCDs A comparative study of proton radiation damage in p- and n-channel CCDs

Aug 2009

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=2009spie.7435e..10g&link_type=abstract

UV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XVI. Edited by Siegmund, Oswald H. Proceedings of the SPIE, Volume

Astronomy and Astrophysics

Astronomy

2

Scientific paper

It has been demonstrated that p-channel charge coupled devices (CCDs) are more radiation hard than conventional nchannel devices as they are not affected by the dominant electron trapping caused by the displacement damage defect the E-centre (phosphorus-vacancy). This paper presents a summary of the results from a comparative study of n-channel and p-channel CCDs each type operated under the same conditions. The CCD tested is the e2v technologies plc CCD47-20, a 1024 × 1024 frame transfer device with a split output register, fabricated using the same mask to form n-channel and p-channel devices. The p-channel devices were irradiated to a 10 MeV equivalent proton fluence of 4.07×1010 protons.cm-2 and 1.35×1011 protons.cm-2, an n-channel CCD was irradiated to a 10 MeV equivalent proton fluence of 1.68×109 protons.cm-2, however due to time constraints the n-channel device was not characterised, n-channel comparisons are instead made using a CCD02. As expected the p-channel CCD demonstrated improved radiation tolerance when compared to the n-channel CCD, at -90 °C there is an approximate ×7 and ×15 improvement in tolerance to radiation induced parallel and serial CTI respectively for equivalent pixel geometries.

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