A 640 X 480-element PtSi IR sensor with low noise MOS X-Y addressable multiplexer

Details A 640 X 480-element PtSi IR sensor with low noise MOS X-Y addressable multiplexer A 640 X 480-element PtSi IR sensor with low noise MOS X-Y addressable multiplexer

Sep 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990spie.1308...81s&link_type=abstract

IN: Infrared detectors and focal plane arrays; Proceedings of the Meeting, Orlando, FL, Apr. 18, 19, 1990 (A91-36726 15-35). Bel

Computer Science

Performance

Infrared Scanners, Metal Oxide Semiconductors, Multiplexing, Platinum Compounds, Schottky Diodes, Cmos, Data Sampling, Focal Plane Devices, Silicides

Scientific paper

The design of a 640 by 480 element PtSi IR sensor is presented which includes a low-noise MOS X-Y addressable readout multiplexer and an on-chip correlated double-sampling amplifier. The sensor is designed to load scan data into CMOS horizontal and vertical scanning registers by means of a multiplexed horizontal/vertical input address port and onchip decoding, allowing any element in the focal plane array to be randomly accessed. The FPA is shown to be operable in both the interlaced and noninterlaced formats, with variable exposure control. Enhanced noise performance is shown due to the use of buried channel source follower buffers in the horizontal signal lines. It was shown that 24 micron square pixels with a 1.5 micron double level metal CMOS process provide a fill factor of 38 percent. TTL compatibility and ESD protection diodes are key features of the digital inputs to the sensor's chip.

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