A 128 X 128 InGaAs detector array for 1.0 - 1.7 microns

Details A 128 X 128 InGaAs detector array for 1.0 - 1.7 microns A 128 X 128 InGaAs detector array for 1.0 - 1.7 microns

Nov 1990

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1990spie.1341..432o&link_type=abstract

IN: Infrared technology XVI; Proceedings of the Meeting, San Diego, CA, July 11-13, 1990 (A92-21426 07-35). Bellingham, WA, Soci

Computer Science

2

Indium Gallium Arsenides, Infrared Detectors, Indium Phosphides, Linear Arrays, Quantum Efficiency, Room Temperature, Silicon Nitrides

Scientific paper

A two-dimensional 128 x 128 detector array for the 1.0 - 1.7 micron spectral region has been demonstrated with indium gallium arsenide. The 30 micron square pixels had 60 micron spacing in both directions and were designed to be compatible with a 2D Reticon multiplexer. Dark currents below 100 pA, capacitance near 0.1 pF, and quantum efficiencies above 80 percent were measured. Probe maps of dark current and quantum efficiency are presented along with pixel dropout data and wafer yield which was as high as 99.89 percent (7 dropouts) in an area of 6528 pixels and 99.37 percent (103 dropouts) over an entire 128 x 128 pixel region.

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