7.9-8.4 GHz GaAs M.E.S.F.E.T. amplifier

Details 7.9-8.4 GHz GaAs M.E.S.F.E.T. amplifier 7.9-8.4 GHz GaAs M.E.S.F.E.T. amplifier

Sep 1976

adsabs.harvard.edu/cgi-bin/nph-data_query?bibcode=1976ell....12..493g&link_type=abstract

Electronics Letters, vol. 12, Sept. 16, 1976, p. 493, 494.

Computer Science

Amplifier Design, Field Effect Transistors, Gallium Arsenides, Microwave Amplifiers, Power Gain, Frequency Response, Intermodulation, Noise Spectra, Phase Shift, Satellite Communication, Signal Distortion, Temperature Effects, Transistor Amplifiers

Scientific paper

A 4-stage balanced GaAs MES FET amplifier has been developed for the 7.9-8.4-GHz satellite-communication frequency band. Linear gain of 26 + or - 0.5 dB and 150 mW power at 1 dB compression were obtained across the design band. The samll-signal gain, phase linearity, group delay, and noise figure are described as a function of frequency. Large-signal gain saturation, third-order intermodulation distortion, gain, and phase against temperature and a.m.-to-p.m. conversion data are also presented.

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